ELECTRONIC PROPERTIES OF SILICON DOPED WITH SILVER

被引:28
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THIEL, FL
GHANDHI, SK
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10.1063/1.1658331
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O59 [应用物理学];
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页码:254 / &
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共 13 条
[1]  
BOLTAKS BI, 1961, SOV PHYS-SOL STATE, V2, P2383
[2]  
BOLTAKS BI, PRIVATE COMMUNICATIO
[3]   PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J].
COLLINS, CB ;
CARLSON, RO .
PHYSICAL REVIEW, 1957, 108 (06) :1409-1414
[4]   GOLD AS A RECOMBINATION CENTRE IN SILICON [J].
FAIRFIELD, JM ;
GOKHALE, BV .
SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+
[5]  
FRANKL DR, 1967, ELECTRICAL PROPERTIE, P164
[6]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[7]   CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].
LAX, M .
PHYSICAL REVIEW, 1960, 119 (05) :1502-1523
[8]   DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J].
LUDWIG, GW ;
WATTERS, RL .
PHYSICAL REVIEW, 1956, 101 (06) :1699-1701
[9]  
Muraoka H., 1968, Toshiba Review (International Edition), P49
[10]  
NIKOLAEVA EA, 1967, SOV PHYS SEMICOND+, V1, P381