MODELING OF NOVEL HETEROJUNCTION TUNNEL STRUCTURES

被引：34

作者：

TING, DZ

YU, ET

COLLINS, DA

CHOW, DH

MCGILL, TC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：810 / 816

页数：7

共 13 条

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[2]

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[4]

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[8] NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE BASED ON RESONANT INTERBAND TUNNELING [J].

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[9]

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