A HIGH-SENSITIVITY BRIDGE FOR THE MEASUREMENT OF DEEP STATES IN SEMICONDUCTORS

被引：14

作者：

MISRACHI, S

PEAKER, AR

HAMILTON, B

机构：

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1980年 / 13卷 / 10期

关键词：

D O I：

10.1088/0022-3735/13/10/005

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

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页码：1055 / 1061

页数：7

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