HIGH-TEMPERATURE LIMIT OF NON-RADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORS

被引：13

作者：

PASSLER, R ^{[1
]}

机构：

[1] TH KARL MARX STADT, SEKT PHYS ELEKTR BAUELEMENTE, DDR-90 KARL MARX STADT, GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1977年 / 83卷 / 01期

关键词：

D O I：

10.1002/pssb.2220830153

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：K55 / K58

页数：4

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