SMALL-SIGNAL MODULATION OF DH LASER-DIODES - EFFECT OF THE JUNCTION CAPACITANCE

[1] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 89 - 94

[2] DERIVATIVE MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) : 633 - 639

[3] BOISROBERT CY, 1976, OPT COMMUN, V19, P305, DOI 10.1016/0030-4018(76)90366-7

[4] MULTIMODE RATE EQUATION DESCRIPTION OF HOMOGENEOUS SPECTRAL BROADENING IN SEMICONDUCTOR-LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (16) : 505 - 507

[5] REDUCTION OF RESONANCE-LIKE PEAK IN DIRECT MODULATION DUE TO CARRIER DIFFUSION IN INJECTION-LASER [J]. APPLIED OPTICS, 1978, 17 (12): : 1949 - 1952

[6] HARTH W, 1976, AEU-INT J ELECTRON C, V30, P343

[7] LASING-INDUCED CHANGE IN THE DIFFERENTIAL RESISTANCE OF STRIPE GEOMETRY GA1-A1ASDH LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 333 - 341

[8] Kressel H., 1977, SEMICONDUCTOR LASERS, P73

[9] KUWAHARA H, 1977, IEEE, V65, P1412

[10] EFFECT OF JUNCTION CAPACITANCE ON RISE TIME OF LEDS AND ON TURN-ON DELAY OF INJECTION LASERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1975, 54 (01): : 53 - 68

[1] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 89 - 94

[2] DERIVATIVE MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) : 633 - 639

[3] BOISROBERT CY, 1976, OPT COMMUN, V19, P305, DOI 10.1016/0030-4018(76)90366-7

[4] MULTIMODE RATE EQUATION DESCRIPTION OF HOMOGENEOUS SPECTRAL BROADENING IN SEMICONDUCTOR-LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (16) : 505 - 507

[5] REDUCTION OF RESONANCE-LIKE PEAK IN DIRECT MODULATION DUE TO CARRIER DIFFUSION IN INJECTION-LASER [J]. APPLIED OPTICS, 1978, 17 (12): : 1949 - 1952

[6] HARTH W, 1976, AEU-INT J ELECTRON C, V30, P343

[7] LASING-INDUCED CHANGE IN THE DIFFERENTIAL RESISTANCE OF STRIPE GEOMETRY GA1-A1ASDH LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 333 - 341

[8] Kressel H., 1977, SEMICONDUCTOR LASERS, P73

[9] KUWAHARA H, 1977, IEEE, V65, P1412

[10] EFFECT OF JUNCTION CAPACITANCE ON RISE TIME OF LEDS AND ON TURN-ON DELAY OF INJECTION LASERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1975, 54 (01): : 53 - 68