MANY-BODY CALCULATION OF THE SURFACE-STATE ENERGIES FOR SI(111)2X1

被引：122

作者：

NORTHRUP, JE

HYBERTSEN, MS

LOUIE, SG

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[3] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.66.500

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The surface-state excitation energies for the Si(111)2x1 surface have been calculated in the GW approximation. The energy position and the dispersion of the occupied and empty surface states are in excellent agreement with photoemission and inverse-photoemission experiments. The calculated quasiparticle surface-state band gap, 0.62 eV, is 0.15 eV larger than the measured onset energy for electron-hole pair excitations. The possibility that excitonic effects are responsible for this difference is examined.

引用

页码：500 / 503

页数：4

共 28 条

[1]

ANCILOTTO F, IN PRESS

[2]

BASSANI F, 1975, ELECTRONIC STATES OP

[3] PICOSECOND SURFACE ELECTRON DYNAMICS ON PHOTOEXCITED SI(111) (2X1) SURFACES [J].