POSITION OF THE EMPTY SURFACE-STATE BAND ON SI(111)2X1

被引：21

作者：

CRICENTI, A ^{[1
]}

SELCI, S ^{[1
]}

MAGNUSSON, KO ^{[1
]}

REIHL, B ^{[1
]}

机构：

[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.41.12908

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The cleaved silicon surface of a highly n-type doped crystal has been studied with k-resolved inverse-photoemission spectroscopy (KRIPES). The dispersion of the unoccupied electronic surface-state band of a single-domain 2×1 reconstruction was found to be very similar to p-type doped samples. The band minimum at point J occurs at the same energy value with similar intensity as for p-type doped samples. Comparison of the present results with scanning tunneling microscopy (STM) and angle-resolved ultraviolet photoelectron spectroscopy (ARUPS), on similar samples, indicates that the empty band observed in KRIPES differs from that seen at the Fermi level by STM and ARUPS. An explanation in terms of either many-body effects in KRIPES or of strong electron-phonon interactions in the different techniques is suggested. © 1990 The American Physical Society.

引用

页码：12908 / 12910

页数：3

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