P-CHANNEL MOSFETS WITH ULTRATHIN N2O GATE OXIDES

被引：25

作者：

LO, GQ

TING, W

AHN, J

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, TX.

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 02期

关键词：

D O I：

10.1109/55.144975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the performance and reliability of p-channel MOSFET's utilizing ultrathin (approximately 62 angstrom) gate dielectrics grown in pure N2O ambient. Unlike (reoxidized) NH-3-nitrided oxide devices, p-MOSFET's with N2O-grown oxides show improved performance in both linear and saturation regions compared to control devices with gate oxides grown in O2. Because both electron and hole trapping are suppressed in N2O-grown oxides, the resulting p-MOSFET's show considerably enhanced immunity to channel hot-electron and -hole-induced degradation (e.g., hot-electron-induced punchthrough (HEIP)).

引用

页码：111 / 113

页数：3

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