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STRONG-FIELD EFFECT IN NANOFABRICATION ON CHEMICALLY PREPARED SILICON

被引：6
作者：
HETRICK, JM
ZHENG, X
NAYFEH, MH
机构：
[1] Department of Physics, University of Illinois-Urbana/Champaign, Urbana, IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期
关键词：
D O I：
10.1063/1.352746
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the uniformity of scanning tunneling microscope nanofabrication on as-prepared chemically etched silicon. Our results show that continuous fabrication produces isolated nanoscale dots along the motion of the tip rather than uniform lines. These results are discussed with the aid of a self-limiting strong-field effect.
引用
收藏
页码：4721 / 4723
页数：3
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