HOT-ELECTRON RELAXATIONS AND HOT PHONONS IN GAAS STUDIED BY SUBPICOSECOND RAMAN-SCATTERING

被引：72

作者：

KIM, DS ^{[1
]}

YU, PY ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, DIV MAT & CHEM SCI, BERKELEY, CA 94720 USA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.43.4158

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have utilized subpicosecond laser pulses to excite and probe hot electrons and nonequilibrium longitudinal-optical (LO) phonons in bulk GaAs by Raman scattering. We find that the photoexcited hot electrons cool at a rate much faster than predicted by intravalley scattering of LO phonons via the Frolich interaction. On the other hand, this fast cooling rate can be accounted for satisfactorily by intervalley scattering. As a result of this very rapid cooling, the temperature of the hot LO phonons generated by the hot electrons temporarily overshoots the electron temperature. From the electron cooling curve and the dependence of the hot-phonon temperature on the excited-electron density, we determined the deformation potential for scattering between the GAMMA and L conduction-band valleys in GaAs.

引用

页码：4158 / 4169

页数：12

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