KINETICS OF SURFACTANT-MEDIATED EPITAXIAL-GROWTH

被引:59
作者
MARKOV, I [1 ]
机构
[1] BULGARIAN ACAD SCI,INST PHYS CHEM,BU-1040 SOFIA,BULGARIA
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 15期
关键词
D O I
10.1103/PhysRevB.50.11271
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A kinetic model for surfactant-mediated epitaxial growth is suggested. The surfactant atoms join kinks predominantly at steps as the latter are the energetically most favored sites on the crystal surface. The deposited atoms must displace them in order to join the crystal lattice. This gives rise to additional kinetic barriers the atoms have to overcome when they join the ascending steps. The asymmetry of incorporating atoms in ascending and descending steps is reversed and a diffusion gradient that drives the atoms to join the descending steps appears. The thermodynamic driving force for the two-dimensional-three-dimensional transformation to occur is suppressed and layer-by-layer growth takes place.
引用
收藏
页码:11271 / 11274
页数:4
相关论文
共 19 条
[1]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[2]  
Chernov A. A., 1984, MODERN CRYSTALLOGRAP
[3]   SURFACTANTS IN EPITAXIAL-GROWTH [J].
COPEL, M ;
REUTER, MC ;
KAXIRAS, E ;
TROMP, RM .
PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635
[4]   STRANSKI-KRASTANOV GROWTH OF AG ON AU(111) ELECTRODES [J].
CORCORAN, SG ;
CHAKAROVA, GS ;
SIERADZKI, K .
PHYSICAL REVIEW LETTERS, 1993, 71 (10) :1585-1588
[5]   ATOMIC VIEW OF SURFACE SELF-DIFFUSION - TUNGSTEN ON TUNGSTEN [J].
EHRLICH, G ;
HUDDA, FG .
JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (03) :1039-&
[6]   THIN-FILM GROWTH MODES, WETTING AND CLUSTER NUCLEATION [J].
GRABOW, MH ;
GILMER, GH .
SURFACE SCIENCE, 1988, 194 (03) :333-346
[7]   NOVEL STRAIN-INDUCED DEFECT IN THIN MOLECULAR-BEAM-EPITAXY LAYERS [J].
LEGOUES, FK ;
COPEL, M ;
TROMP, R .
PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1826-1829
[8]   RECENT THEORETICAL DEVELOPMENTS IN EPITAXY [J].
MARKOV, I .
MATERIALS CHEMISTRY AND PHYSICS, 1993, 36 (1-2) :1-30
[9]   MECHANISMS OF EPITAXIAL-GROWTH [J].
MARKOV, I ;
STOYANOV, S .
CONTEMPORARY PHYSICS, 1987, 28 (03) :267-320
[10]   EFFECT OF SURFACTANTS ON SURFACE MIGRATION IN SI MBE [J].
SAKAMOTO, K ;
MIKI, K ;
SAKAMOTO, T ;
MATSUHATA, H ;
KYOYA, K .
JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :392-395