EFFECT OF SURFACTANTS ON SURFACE MIGRATION IN SI MBE

被引：25

作者：

SAKAMOTO, K

MIKI, K

SAKAMOTO, T

MATSUHATA, H

KYOYA, K

机构：

[1] Electrotechnical Laboratory, Tsukuba, 305

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90646-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The behavior of Sb adsorbed on Si(001) and its effect on Si MBE have been investigated by reflection high-energy electron diffraction (RHEED). A RHEED intensity oscillation of 2 periods was observed during Sb adsorption for 1 ML, implying two distinct adsorption phases. RHEED studies have shown that Sb atoms suppress the surface diffusion of Si atoms and that Si nucleation is affected by Sb atoms.

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页码：392 / 395

页数：4

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