PHOTOPUMPED LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASERS USING STRAIN-COMPENSATED MULTIPLE-QUANTUM WELLS

被引：18

作者：

LIN, CH ^{[1
]}

CHUA, CL ^{[1
]}

ZHU, ZH ^{[1
]}

EJECKAM, FE ^{[1
]}

WU, TC ^{[1
]}

LO, YH ^{[1
]}

BHAT, R ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 25期

关键词：

D O I：

10.1063/1.111286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report optically pumped long wavelength vertical-cavity surface-emitting lasers (VCSELs) made of strain-compensated multiple quantum wells. The structure of the VCSELs consists of 30 pairs of compressive strained wells and tensile strained barriers as the gain medium and Si/SiO2 dielectric mirrors. The lasers operate at 1.59 mum wavelength. The threshold power density was measured to be 3 kW/cm2 at room temperature, corresponding to a threshold current density of about 2 kA/cm2. The VCSELs have a characteristic temperature T0 of 90 K between 10 and 60-degrees-C, and 60 K from 70 to 110-degrees-C.

引用

收藏

页码：3395 / 3397

页数：3

相关论文

共 13 条

[1] GAIN AND THRESHOLD CHARACTERISTICS OF STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL LASERS [J].

BRIGGS, ATR ;

GREENE, PD ;

JOWETT, JM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (05) :423-425

[2] THEORETICAL GAIN IN STRAINED INGAAS/ALGAAS QUANTUM-WELLS INCLUDING VALENCE-BAND MIXING EFFECTS [J].

CORZINE, SW ;

YAN, RH ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2835-2837

[3] ROOM-TEMPERATURE PHOTOPUMPED OPERATION OF AN INGAAS-INP VERTICAL CAVITY SURFACE-EMITTING LASER [J].

DEPPE, DG ;

SINGH, S ;

DUPUIS, RD ;

GERRARD, ND ;

ZYDZIK, GJ ;

VANDERZIEL, JP ;

GREEN, CA ;

PINZONE, CJ .

APPLIED PHYSICS LETTERS, 1990, 56 (22) :2172-2174

[4] LOW-THRESHOLD, WAFER FUSED LONG-WAVELENGTH VERTICAL-CAVITY LASERS [J].

DUDLEY, JJ ;

BABIC, DI ;

MIRIN, R ;

YANG, L ;

MILLER, BI ;

RAM, RJ ;

REYNOLDS, T ;

HU, EL ;

BOWERS, JE .

APPLIED PHYSICS LETTERS, 1994, 64 (12) :1463-1465

[5] ROOM-TEMPERATURE CONTINUOUS WAVE LASING CHARACTERISTICS OF A GAAS VERTICAL CAVITY SURFACE-EMITTING LASER [J].

KOYAMA, F ;

KINOSHITA, S ;

IGA, K .

APPLIED PHYSICS LETTERS, 1989, 55 (03) :221-222

[6] ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SINGLE-QUANTUM-WELL MICROLASER DIODES [J].

LEE, YH ;

JEWELL, JL ;

SCHERER, A ;

MCCALL, SL ;

HARBISON, JP ;

FLOREZ, LT .

ELECTRONICS LETTERS, 1989, 25 (20) :1377-1378

[7] EMPIRICAL FORMULAS FOR DESIGN AND OPTIMIZATION OF 1.55 MU-M INGAAS/INGAASP STRAINED-QUANTUM-WELL LASERS [J].

LIN, CH ;

LO, YH .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (03) :288-290

[8] BONDING BY ATOMIC REARRANGEMENT OF INP/INGAASP 1.5-MU-M WAVELENGTH LASERS ON GAAS SUBSTRATES [J].

LO, YH ;

BHAT, R ;

HWANG, DM ;

KOZA, MA ;

LEE, TP .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :1961-1963

[9] STRAIN-COMPENSATED STRAINED-LAYER SUPERLATTICES FOR 1.5-MU-M WAVELENGTH LASERS [J].

MILLER, BI ;

KOREN, U ;

YOUNG, MG ;

CHIEN, MD .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :1952-1954

[10]

MITO I, 1989, P C INTEGRATED OPTIC