THE STEADY-STATE HOLE MOBILITY LIFETIME PRODUCT IN UNDOPED A-SI-H

被引：10

作者：

LIU, JZ ^{[1
]}

MARUYAMA, A ^{[1
]}

WAGNER, S ^{[1
]}

DELAHOY, A ^{[1
]}

机构：

[1] CHRONAR CORP,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1016/0022-3093(89)90164-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：363 / 365

页数：3

共 9 条

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LIU, JZ
WAGNER, S
[J]. PHYSICAL REVIEW B, 1989, 39 (15): : 11156 - 11159
[3] LIU JZ, 1989, IN PRESS MATER RES S, V149
[4] STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE FOR DIFFUSION-LENGTH MEASUREMENT IN SEMICONDUCTORS - THEORY AND EXPERIMENTAL RESULTS FOR AMORPHOUS-SILICON AND SEMIINSULATING GAAS
RITTER, D
WEISER, K
ZELDOV, E
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) : 4563 - 4570
[5] RITTER D, 1986, PHYS REV B, V34, P9013
[6] SCHWARZ R, 1987, MAT RES SOC S, V95, P353
[7] SLOBODIN D, 1985, MATER RES SOC S P, V49, P153
[8] TAYLOR GW, 1972, J NONCRYST SOLIDS, V8, P940
[9] THE TEMPERATURE-DEPENDENCE OF THE PHOTOCONDUCTIVITY OF N-TYPE ALPHA-SI-H AND THE EFFECT OF STAEBLER-WRONSKI DEFECTS
VOMVAS, A
FRITZSCHE, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 823 - 826