BEHAVIOR OF TE IN VAPOR-GROWN GAP

被引：10

作者：

TAYLOR, RC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 02期

关键词：

D O I：

10.1149/1.2408051

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：364 / +

页数：1

共 16 条

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[7] BULK GROWTH OF GAP BY HALOGEN VAPOR TRANSPORT [J].

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[10] DEFECT STRUCTURE OF GAP CRYSTALS GROWN FROM GALLIUM SOLUTIONS VAPOR PHASE AND LIQUID PHASE EPITAXIAL DEPOSITION [J].

SAUL, RH .

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