A SIMPLE MANS VIEW OF THE PASSIVATION OF SEMICONDUCTORS

被引:5
作者
VANVECHTEN, JA
机构
[1] Center for Advanced Materials Research Department of Electrical, Computer Engineering Oregon State University, Corvallis
关键词
Dangling Bond; Gettering; Hydrogen; Nitride; Noble Gas; Oxide; Passivation; Semiconductor; SiO[!sub]2[!/sub;
D O I
10.1016/0010-938X(90)90089-N
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The author here attempts to present a fundamental and general discussion of the problem of passivating an electronic device made of semiconducting materials. He also points out what he believes to be a few misconceptions in the current literature and makes a suggestion for further progress. © 1990.
引用
收藏
页码:39 / 52
页数:14
相关论文
共 60 条
[1]  
BONDENIELSEN K, 1985, J ELECTRON MATER A, V14, P1065
[3]   THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876
[4]   METALLIC GLASSES [J].
CHAUDHARI, P ;
GIESSEN, BC ;
TURNBULL, D .
SCIENTIFIC AMERICAN, 1980, 242 (04) :98-&
[5]   AMORPHOUS METALLIC FILMS FOR BUBBLE DOMAIN APPLICATIONS [J].
CHAUDHARI, P ;
CUOMO, JJ ;
GAMBINO, RJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (01) :66-68
[6]   THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J].
DABROWSKI, J ;
SCHEFFLER, M .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2183-2186
[7]   OXYGEN IN SILICON - A POSITRON-ANNIHILATION INVESTIGATION [J].
DANNEFAER, S ;
KERR, D .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1313-1321
[8]   ON THE CHARACTER OF DEFECTS IN GAAS [J].
DANNEFAER, S ;
MASCHER, P ;
KERR, D .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (20) :3213-3238
[9]  
DANNEFAER S, COMMUNICATION
[10]   POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON [J].
FAHEY, PM ;
GRIFFIN, PB ;
PLUMMER, JD .
REVIEWS OF MODERN PHYSICS, 1989, 61 (02) :289-384