DIODE CHARACTERISTICS AND DEGRADATION MECHANISM OF ION-IMPLANTED POLYACETYLENE FILMS

被引：22

作者：

WANG, WM

WAN, HH

RONG, TW

BAO, JR

LIN, SH

机构：

[1] Shanghai Institute of Nuclear Research, Academia Sinica, Shanghai

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 61卷 / 04期

关键词：

D O I：

10.1016/0168-583X(91)95324-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The diode characteristics (rectifying ratio, threshold and breakdown voltage) have been studied for a p-n junction produced by implanting K+ ions into FeCl3 doped polyacetylene (PA) films which were synthesized by the rare-earth catalyst technique and Naarmann method, respectively. A rectifying ratio of over 300 and a breakdown voltage of about 25-30 V have been achieved. Some of the modified PA films could keep their p-n junctions for more than 2000 hours at the temperature of 0-degrees-C after implantation. Different ion beam techniques were used to investigate the PA film oxidation, dopant losses and the diffusion of implanted species for the purpose of trying to have a good understanding of the degration mechanism for a polymer p-n junction.

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收藏

页码：466 / 471

页数：6

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