EFFECT OF OXYGEN ON ETCH-PIT FORMATION IN SILICON

被引：18

作者：

LOGAN, RA

PETERS, AJ

机构：

来源：

关键词：

D O I：

10.1063/1.1722670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1419 / 1423

页数：5

共 10 条

[1] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

[2]

FULLER, 1955, ACTA METALLURGICA, V3, P97

[3]

HROSTOWSKI HJ, COMMUNICATION

[4]

KAISER, 1956, PHYS REV, V101, P1264

[5] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[6] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

[7]

LEDERHANDLER S, 1956, B AM PHYS SOC, V1, P381

[8] DIFFUSION OF OXYGEN IN SILICON [J].

LOGAN, RA ;

PETERS, AJ .

[9]

TEAL GK, 1951, PHYS REV, V78, P637

[10] DISLOCATION ETCH PITS IN SILICON CRYSTALS [J].

VOGEL, FL ;

LOVELL, LC .