PHOTOLUMINESCENCE FROM ULTRATHIN ZNSE/CDSE QUANTUM-WELLS

被引:47
作者
ZAJICEK, H
JUZA, P
ABRAMOF, E
PANKRATOV, O
SITTER, H
HELM, M
BRUNTHALER, G
FASCHINGER, W
LISCHKA, K
机构
[1] UNIV LINZ,INST HALBLEITERPHYS,A-4040 LINZ,AUSTRIA
[2] UNIV LINZ,FORSCHUNGSINST OPTOELEKTR,A-4040 LINZ,AUSTRIA
[3] INST PESQUISAS ESPACIAIS,BR-12201 S JOSE CAMPO,SP,BRAZIL
关键词
D O I
10.1063/1.109615
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-limiting monolayer epitaxy has been used to prepare ZnSe/CdSe quantum well structures containing 1-5 monolayers (almost-equal-to 3-15 angstrom) thick CdSe quantum wells. Photoluminescence spectra of these structures show bright excitonic lines with a blue shift of maximum 870 meV for the 1 monolayer wide quantum wells. Calculations for the energetic positions of the photoluminescence peaks are in good agreement with the experimental data. The full width at half maximum of the photoluminescence lines increases from about 25 meV for the 1 ML quantum wells to about 75 meV for the 3 ML quantum wells.
引用
收藏
页码:717 / 719
页数:3
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