NONLINEAR PROPERTIES OF IMPATT DEVICES

被引：64

作者：

SCHROEDER, WE ^{[1
]}

HADDAD, GI ^{[1
]}

机构：

[1] UNIV MICHIGAN, DEPT ELECT & COMP ENGN, ELECTR PHYS LAB, ANN ARBOR, MI 48104 USA

来源：

PROCEEDINGS OF THE IEEE | 1973年 / 61卷 / 02期

关键词：

D O I：

10.1109/PROC.1973.9002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：153 / 182

页数：30

共 66 条

[1]

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BLUE, JL .

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[3] PULSE-DRIVEN SILICON P-N JUNCTION AVALANCHE OSCILLATORS FOR 0.9 TO 20 MM BAND [J].

BOWMAN, LS ;

BURRUS, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) :411-+

[4]

BUTCHER PN, 1969, PHYS LETT A, V29, P578

[5] THERMAL EFFECTS AND PULSE MODE OPERATION OF IMPATT DIODES [J].

CHUDOBIAK, WJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (06) :935-+

[6] EFFECT OF JUNCTION TEMPERATURE ON OUTPUT POWER OF A SILICON IMPATT DIODE [J].

CHUDOBIAK, WJ ;

MAKIOS, V ;

MCKILLIC.R .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (03) :340-+

[7] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

[8] HOLE VELOCITY IN P-GAAS [J].

DALAL, VL .

APPLIED PHYSICS LETTERS, 1970, 16 (12) :489-&

[9] EFFECT OF INJECTING CONTACTS ON AVALANCHE DIODE PERFORMANCE [J].

DECKER, DR ;

DUNN, CN ;

FROST, HB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) :141-+

[10]

DELOACH BC, 1967, ADVANCES MICROWAVES, V2, pCH3

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