COMPOSITION OF PHOSPHOSILICATE GLASS BY INFRARED-ABSORPTION

被引：50

作者：

TENNEY, AS ^{[1
]}

GHEZZO, M ^{[1
]}

机构：

[1] GEN ELECT CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 09期

关键词：

Silicates;

D O I：

10.1149/1.2403677

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

While the ratio of the linear absorbances of these bands depends somewhat on deposition temperature as well as on film composition, the ratio of the areas of these bands is uniquely related to film composition over the range of deposition temperature studied. The deposition rates and compositions of these films (for a constant flow of reactant gases) were found to be relatively weakly dependent on deposition temperature. These results for phosphosilicate glass combined with previously published calibration curves for borosilicate and arsenosilicate glasses allow the rapid, nondestructive determination of the compositions of all three doped glasses commonly used as sources for impurity diffusion into silicon.

引用

页码：1276 / 1279

页数：4

共 28 条

[1]

ANDERSON CA, 1966, ELECTRON MICROBE

[2]

BALIGA BJ, 1972, KEEE T ELECTRON DEVI, VED19, P761

[3]

BARRY ML, 1971, J ELECTROCHEM SOC, V117, P1405

[4] GLASS SOURCE B DIFFUSION IN SI AND SIO2 [J].