MEASUREMENTS OF DEFECTS AND STRAIN IN SOS FILMS AFTER CW AR LASER ANNEALING IN THE LIQUID-PHASE REGIME

被引:10
作者
GOLECKI, I
GLASS, HL
KINOSHITA, G
MAGEE, TJ
机构
[1] ADV RES & APPLICAT CORP,SUNNYVALE,CA 94086
[2] CALTECH,PASADENA,CA 91125
关键词
D O I
10.1016/0378-5963(81)90044-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:299 / 314
页数:16
相关论文
共 21 条
[21]   RELIEF OF RESIDUAL STRAIN IN SILICON-ON-SAPPHIRE BY HEAT-ASSISTED PULSED-LASER ANNEALING [J].
YAMAZAKI, K ;
YAMADA, M ;
YAMAMOTO, K ;
ABE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L371-L374