RELIEF OF RESIDUAL STRAIN IN SILICON-ON-SAPPHIRE BY HEAT-ASSISTED PULSED-LASER ANNEALING

被引：3

作者：

YAMAZAKI, K

YAMADA, M

YAMAMOTO, K

ABE, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期

关键词：

D O I：

10.1143/JJAP.20.L371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L371 / L374

页数：4

共 12 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :741-743

[3] CRYSTALLINE DISORDER REDUCTION AND DEFECT-TYPE CHANGE IN SILICON ON SAPPHIRE FILMS BY SILICON IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING [J].

INOUE, T ;

YOSHII, T .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :64-66

[4] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES [J].

LAU, SS ;

MATTESON, S ;

MAYER, JW ;

REVESZ, P ;

GYULAI, J ;

ROTH, J ;

SIGMON, TW ;

CASS, T .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :76-78

[5] LASER ANNEALING OF SILICON ON SAPPHIRE [J].

ROULET, ME ;

SCHWOB, P ;

AFFOLTER, K ;

LUTHY, W ;

ALLMEN, MV ;

FALLAVIER, M ;

MACKOWSKI, JM ;

NICOLET, MA ;

THOMAS, JP .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5536-5538

[6] STRESS-RELIEVED REGROWTH OF SILICON ON SAPPHIRE BY LASER ANNEALING [J].

SAIHALASZ, GA ;

FANG, FF ;

SEDGWICK, TO ;

SEGMULLER, A .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :419-422

[7] COMPUTER-SIMULATION OF LASER ANNEALING SILICON AT 1.06 MU-M [J].

SCHULTZ, JC ;

COLLINS, RJ .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :84-87

[8] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING [J].

SURKO, CM ;

SIMONS, AL ;

AUSTON, DH ;

GOLOVCHENKO, JA ;

SLUSHER, RE ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :635-637

[9] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

WANG, JC ;

WOOD, RF ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458

[10] CRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS RF-SPUTTERED ON SAPPHIRE BY CW ION LASER ANNEALING [J].

YAMADA, M ;

HARA, S ;

YAMAMOTO, K ;

ABE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L261-L264

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