CRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS RF-SPUTTERED ON SAPPHIRE BY CW ION LASER ANNEALING

被引：5

作者：

YAMADA, M

HARA, S

YAMAMOTO, K

ABE, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 05期

关键词：

D O I：

10.1143/JJAP.19.L261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L261 / L264

页数：4

共 14 条

[1] VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J].

ALBEN, R ;

WEAIRE, D ;

SMITH, JE ;

BRODSKY, MH .

PHYSICAL REVIEW B, 1975, 11 (06) :2271-2296

[2] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[3] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[4] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[5] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[6] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[7] USE OF A SCANNING CW KR LASER TO OBTAIN DIFFUSION-FREE ANNEALING OF B-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

WILLIAMS, P ;

DELINE, V ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :389-391

[8] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J].

GIBBONS, JF ;

LEE, KF ;

MAGEE, TJ ;

PENG, J ;

ORMOND, R .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :831-833

[9]

KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[10]

KLIMENKO AG, 1976, SOV J QUANTUM ELECTR, V5, P1289

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