VMOS CONDUCTIVELY COUPLED CHARGE-COUPLED DEVICE

被引：3

作者：

PARKS, CM ^{[1
]}

SALAMA, CAT ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1049/el:19730439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：593 / 594

页数：2

共 7 条

[1] CHARGE COUPLED SEMICONDUCTOR DEVICES
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SMITH, GE
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +
[2] V GROOVE MOS-TRANSISTOR TECHNOLOGY
HOLMES, FE
SALAMA, CAT
[J]. ELECTRONICS LETTERS, 1973, 9 (19) : 457 - 458
[3] KOSONOCKY WF, 1971, ISSCC DIG TECH PAPER, P162
[4] IMPLANTED-BARRIER 2-PHASE CHARGE-COUPLED DEVICE
KRAMBECK, RH
WALDEN, RH
PICKAR, KA
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 520 - &
[5] KRAMBECK RH, 1972, P IEEE INT ELECTRON
[6] ANISOTROPIC ETCHING OF SILICON
LEE, DB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4569 - &
[7] CHARGE COUPLED 8-BIT SHIFT REGISTER
TOMPSETT, MF
AMELIO, GF
SMITH, GE
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 111 - &