Dry etching of Pt/PbZrXTi1-XO3/Pt thin film capacitors in an inductively coupled plasma (ICP)

被引：11

作者：

Chung, CW

Lee, WI

Lee, JK

机构：

[1] Materials and Devices Research Center, Samsung Advanced Institute of Technology, Suwon 440-600

来源：

INTEGRATED FERROELECTRICS | 1995年 / 11卷 / 1-4期

关键词：

D O I：

10.1080/10584589508013597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dry etching of PbZrxTi1-xO3(PZT) and Pt thin films was studied with Cl-2/C2F6Ar gas in an Inductively Coupled Plasma (ICP). The etch rates were investigated at various etching conditions including etch gas, coil RF power, DC bias, and gas pressure. For the etching of PZT film, chemical enhancement was found. Under etching conditions used in this study, the etch rate of 430 to 1500 Angstrom/min was obtained for PZT film and the etch rate of Pt film was in the range of 120 to 1890 Angstrom/min. Selectivity of PZT to Pt was controllable in the range of 0.32 to 6.17. For the fabrication of Pt/PZT/Pt thin film capacitors, the etching process using the conventional photolithography has been developed with high etch rates and good selectivities for both PZT and Pt films.

引用

页码：259 / 267

页数：9

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