DEFECTS IN SILICON CRYSTALS GROWN BY VLS TECHNIQUE

被引：48

作者：

WAGNER, RS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 04期

关键词：

D O I：

10.1063/1.1709722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1554 / &

共 27 条

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[5]

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[7]

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[8] DIRECT OBSERVATION OF INDIVIDUAL DISLOCATIONS BY X-RAY DIFFRACTION [J].

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[9] STUDIES OF INDIVIDUAL DISLOCATIONS IN CRYSTALS BY X-RAY DIFFRACTION MICRORADIOGRAPHY [J].

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[10]

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