STRUCTURE OF IONIZED CLUSTER BEAM ALUMINUM DEPOSITED ON (100) SILICON

被引：14

作者：

MADDEN, MC

机构：

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D O I：

10.1063/1.101709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1077 / 1079

页数：3

共 7 条

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[3] CHANNELING STUDY OF STRUCTURAL EFFECTS AT THE AL(111)/SI(111) INTERFACE FORMED BY IONIZED CLUSTER BEAM DEPOSITION
JIN, HS
YAPSIR, AS
LU, TM
GIBSON, WM
YAMADA, I
TAKAGI, I
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1062 - 1064
[4] LEGOUES FK, 1985, LAYERED STRUCTURES E, V37, P395
[5] ION-SURFACE INTERACTIONS DURING THIN-FILM DEPOSITION
TAKAGI, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 382 - 388
[6] EPITAXIAL-GROWTH OF AL ON SI(111) AND SI(100) BY IONIZED-CLUSTER BEAM
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INOKAWA, H
TAKAGI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2746 - 2750
[7] YAMADA I, 1985, MATERIAL RES SOC S P, V37, P401