EXCESS LOW-FREQUENCY NOISE IN PTSI ON P-TYPE SI SCHOTTKY DIODES

被引：4

作者：

MOONEY, JM

机构：

[1] Rome Air Development Center, Hanscom Air Force Base

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 01期

关键词：

D O I：

10.1109/16.65750

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The power spectrum for platinum silicide on p-type silicon Schottky diodes has been measured for the diodes available on an infrared focal plane array. A careful experimental technique is used to separate the mutual drift of the array as a whole from the drift of the individual diodes. The power spectrum of the noise associated with the diodes appears to be white even for frequencies below 3.0 x 10 5 Hz. This result is compared with recent models of 1 /f noise. © 1991 IEEE

引用

页码：160 / 166

页数：7

共 16 条

[1] DISORDERED INTERMIXING AT THE PLATINUM-SILICON INTERFACE DEMONSTRATED BY HIGH-RESOLUTION CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, AUGER-ELECTRON SPECTROSCOPY, AND MEV ION CHANNELING [J].