DISORDERED INTERMIXING AT THE PLATINUM-SILICON INTERFACE DEMONSTRATED BY HIGH-RESOLUTION CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, AUGER-ELECTRON SPECTROSCOPY, AND MEV ION CHANNELING

被引：67

作者：

ABELSON, JR ^{[1
]}

KIM, KB ^{[1
]}

MERCER, DE ^{[1
]}

HELMS, CR ^{[1
]}

SINCLAIR, R ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.340058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：689 / 692

页数：4

共 16 条

[1]

ABELSON JR, 1986, MATERIALS RES SOC S, V69, P275

[2]

ABELSON JR, 1987, MATERIALS RES SOC S, V77

[3] TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE INITIAL-STAGE OF FORMATION OF PD2SI AND PT2SI [J].

ABOELFOTOH, MO ;

ALESSANDRINI, A ;

DHEURLE, FM .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1242-1244

[4] THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

BRAVMAN, JC ;

SINCLAIR, R .

JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01) :53-61

[5] PTSI CONTACT METALLURGY USING SPUTTERED PT AND DIFFERENT ANNEALING PROCESSES [J].

CHANG, CA ;

SEGMULLER, A ;

HUANG, HCW ;

CUNNINGHAM, B ;

TURENE, FE ;

SUGERMAN, A ;

TOTTA, PA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1256-1260

[6] NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE [J].

CHEUNG, NW ;

CULBERTSON, RJ ;

FELDMAN, LC ;

SILVERMAN, PJ ;

WEST, KW ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 45 (02) :120-124

[7]

CHU WK, 1978, BACKSCATTERING SPECT, pCH6

[8] FORMATION OF NOBLE-METAL SI(100) INTERFACES [J].

HANBUCKEN, M ;

LELAY, G .

SURFACE SCIENCE, 1986, 168 (1-3) :122-132

[9]

HIRAKI A, 1985, SURF SCI REP, V3, P35

[10]

HOLLOWAY K, 1987, MATERIALS RES SOC S, V77

← 1 2 →