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RADIATION FROM DOUBLE INJECTION DEVICES
被引:3
作者
:
ASHLEY, KL
论文数:
0
引用数:
0
h-index:
0
机构:
SO METHODIST UNIV,ELECTR SCI CTR,DALLAS,TX 75222
SO METHODIST UNIV,ELECTR SCI CTR,DALLAS,TX 75222
ASHLEY, KL
[
1
]
机构
:
[1]
SO METHODIST UNIV,ELECTR SCI CTR,DALLAS,TX 75222
来源
:
SOLID-STATE ELECTRONICS
|
1973年
/ 16卷
/ 05期
关键词
:
D O I
:
10.1016/0038-1101(73)90166-4
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:641 / 643
页数:3
相关论文
共 8 条
[1]
DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS
[J].
ASHLEY, KL
论文数:
0
引用数:
0
h-index:
0
ASHLEY, KL
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
:369
-&
[2]
ASHLEY KL, TO BE PUBLISHED
[3]
ASHLEY KL, 1963, THESIS CARNEGIE I TE
[4]
ELECTROLUMINESCENCE IN AMPHOTERIC SILICON-DOPED GAAS DIODES .1. STEADY-STATE RESPONSE
[J].
BYER, NE
论文数:
0
引用数:
0
h-index:
0
BYER, NE
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
:1597
-&
[5]
DOUBLE INJECTION CURRENTS IN LONG P-I-N DIODES WITH ONE TRAPPING LEVEL
[J].
DEULING, HJ
论文数:
0
引用数:
0
h-index:
0
DEULING, HJ
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(05)
:2179
-&
[6]
DOUBLE INJECTION IN INSULATORS
[J].
LAMPERT, MA
论文数:
0
引用数:
0
h-index:
0
LAMPERT, MA
.
PHYSICAL REVIEW,
1962,
125
(01)
:126
-&
[7]
ELECTROLUMINESCENT GALLIUM ARSENIDE DIODES WITH NEGATIVE RESISTANCE
[J].
WEISER, K
论文数:
0
引用数:
0
h-index:
0
WEISER, K
;
LEVITT, RS
论文数:
0
引用数:
0
h-index:
0
LEVITT, RS
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(08)
:2431
-&
[8]
DOUBLE INJECTION IN SEMICONDUCTORS WITH MULTIVALENT TRAPPING CENTERS
[J].
ZWICKER, HR
论文数:
0
引用数:
0
h-index:
0
ZWICKER, HR
;
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
STREETMAN, BG
;
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
;
ANDREWS, AM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, AM
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(11)
:4697
-+
←
1
→
共 8 条
[1]
DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS
[J].
ASHLEY, KL
论文数:
0
引用数:
0
h-index:
0
ASHLEY, KL
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
:369
-&
[2]
ASHLEY KL, TO BE PUBLISHED
[3]
ASHLEY KL, 1963, THESIS CARNEGIE I TE
[4]
ELECTROLUMINESCENCE IN AMPHOTERIC SILICON-DOPED GAAS DIODES .1. STEADY-STATE RESPONSE
[J].
BYER, NE
论文数:
0
引用数:
0
h-index:
0
BYER, NE
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
:1597
-&
[5]
DOUBLE INJECTION CURRENTS IN LONG P-I-N DIODES WITH ONE TRAPPING LEVEL
[J].
DEULING, HJ
论文数:
0
引用数:
0
h-index:
0
DEULING, HJ
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(05)
:2179
-&
[6]
DOUBLE INJECTION IN INSULATORS
[J].
LAMPERT, MA
论文数:
0
引用数:
0
h-index:
0
LAMPERT, MA
.
PHYSICAL REVIEW,
1962,
125
(01)
:126
-&
[7]
ELECTROLUMINESCENT GALLIUM ARSENIDE DIODES WITH NEGATIVE RESISTANCE
[J].
WEISER, K
论文数:
0
引用数:
0
h-index:
0
WEISER, K
;
LEVITT, RS
论文数:
0
引用数:
0
h-index:
0
LEVITT, RS
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(08)
:2431
-&
[8]
DOUBLE INJECTION IN SEMICONDUCTORS WITH MULTIVALENT TRAPPING CENTERS
[J].
ZWICKER, HR
论文数:
0
引用数:
0
h-index:
0
ZWICKER, HR
;
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
STREETMAN, BG
;
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
;
ANDREWS, AM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, AM
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(11)
:4697
-+
←
1
→