LOW-TEMPERATURE HETEROEPITAXIAL GROWTH OF CUBIC SIC ON SI USING HYDROCARBON RADICALS BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Single-crystalline cubic SiC on Si in gas source molecular beam epitaxy was achieved by a combination of carbonization of a Si surface and subsequent crystal growth using hydrocarbon radicals and Si2H6. A carbonized layer with a smooth surface was obtained at 750 degrees C. The thickness of the carbonized layer was found to be controlled easily by the number of methyl radicals. In 3C-SiC homoepitaxial growth at 1000 degrees C on a carbonized layer, the Si2H6 flow rate affected the surface morphology of the 3C-SiC epitaxial layer. At a typical now rate of methyl radicals, the growth rate was kept constant, regardless of the Si2H6 flow rate, which implies a layer-by-layer growth mode.