CONTROLLED CARBONIZATION OF SI(001) SURFACE USING HYDROCARBON RADICALS IN ULTRAHIGH-VACUUM

被引：19

作者：

HATAYAMA, T

TARUI, Y

YOSHINOBU, T

FUYUKI, T

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto, 606-01, Yoshidahonmachi

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 136卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90435-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Carbonization of a Si(001) surface by hydrocarbon radicals is obtained in an ultrahigh vacuum at 750-degrees-C. Hydrocarbon gases such as C3H8, C2H6 and CH4 are decomposed by thermal cracking, and generated radical species are investigated by quadrupole mass analysis. The thickness of carbonized layer is controlled easily by cracking temperature and exposure time, and very smooth surfaces are obtained. The differences in the cases of various hydrocarbon sources are discussed in detail.

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页码：333 / 337

页数：5

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