ATOMIC LEVEL CONTROL IN GAS SOURCE MBE GROWTH OF CUBIC SIC

被引：44

作者：

YOSHINOBU, T

NAKAYAMA, M

SHIOMI, H

FUYUKI, T

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto, 606, Yoshidahonmachi

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90575-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single crystalline cubic SiC was homoepitaxially grown at a substrate temperature of 1000°C by supplying Si2H6 and C2H2 beams alternately to a substrate placed in a high vacuum. The growth mechanism is discussed based on RHEED observations of the transitions in the surface superstructures. © 1990.

引用

页码：520 / 524

页数：5

共 11 条

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