CONTROL OF TC FOR NIOBIUM BY N ION-IMPLANTATION

被引:20
作者
GAMO, K
GOSHI, H
TAKAI, M
IWAKI, M
MASUDA, K
NAMBA, S
机构
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
[2] INST CHEM & PHYS RES,SAITAMA,JAPAN
关键词
D O I
10.1143/JJAP.16.1853
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1853 / 1857
页数:5
相关论文
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