EFFECTS OF IMPURITIES ON GAMMA-IRRADIATED SILICON CRYSTAL EXAMINED BY PHOTOVOLTAIC EFFECT OF P-N-JUNCTION DIODE

被引：10

作者：

YAMAGUCHI, M

NAGAI, O

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1972年 / 11卷 / 07期

关键词：

D O I：

10.1143/JJAP.11.1016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1016 / +

页数：1

共 17 条

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198

[2]

BLAIR RR, 1963, BLAIR RR, VNS10, P35

[3] HIGH-ENERGY RADIATION DAMAGE IN SILICON TRANSISTORS [J].

BRUCKER, G ;

DENNEHY, W ;

HOLMESSI.A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (05) :69-&

[4] SPECTRAL RESPONSE OF SOLAR CELLS [J].

DALE, B ;

SMITH, FP .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1377-&

[5] IRRADIATION OF P-N JUNCTIONS WITH GAMMA-RAYS - A METHOD FOR MEASURING DIFFUSION LENGTHS [J].

GREMMELMAIER, R .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1045-1049

[6] A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

SNOW, EH .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06) :894-+

[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[8] RECOMBINATION CENTERS IN GAMMA-IRRADIATED SILICON [J].

HIRATA, M ;

SAITO, H .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1867-&

[9] RADIATION DAMAGE OF CARRIER LIFE TIME IN P TYPE SI [J].

NAKANO, T ;

NAKASIMA, K ;

INUISHI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (12) :2140-+

[10]

SAITO H, 1963, JPN J APPL PHYS, V2, P678

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