BRAGG-DIFFRACTION BY AMORPHOUS-SILICON

被引:60
作者
PHILLIPS, JC [1 ]
BEAN, JC [1 ]
WILSON, BA [1 ]
OURMAZD, A [1 ]
机构
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
关键词
D O I
10.1038/325121a0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:121 / 125
页数:5
相关论文
共 29 条
[1]   GEOMETRY OF THE STRUCTURE OF MONATOMIC LIQUIDS [J].
BERNAL, JD .
NATURE, 1960, 185 (4706) :68-70
[2]   HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J].
BIEGELSEN, DK ;
STREET, RA ;
TSAI, CC ;
KNIGHTS, JC .
PHYSICAL REVIEW B, 1979, 20 (12) :4839-4846
[3]  
BOURRET A, 1985, J SURF SCI, V162, P495
[4]  
COWLEY JM, 1979, ULTRAMICROSCOPY, V3, P433
[5]   BOUNDARY EFFECTS IN SUPERCONDUCTORS [J].
DEGENNES, PG .
REVIEWS OF MODERN PHYSICS, 1964, 36 (1P1) :225-+
[7]   ALMOST CRITICAL-BEHAVIOR OF THE ANCHORING ENERGY AT THE INTERFACE BETWEEN A NEMATIC LIQUID-CRYSTAL AND A SIO SUBSTRATE [J].
FAETTI, S ;
GATTI, M ;
PALLESCHI, V ;
SLUCKIN, TJ .
PHYSICAL REVIEW LETTERS, 1985, 55 (16) :1681-1684
[8]   SURFACE-MORPHOLOGY OF OXIDIZED AND ION-ETCHED SILICON BY SCANNING TUNNELING MICROSCOPY [J].
FEENSTRA, RM ;
OEHRLEIN, GS .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :97-99
[9]   EFFECT OF SILANE DILUTION ON INTRINSIC STRESS IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON FILMS [J].
HARBISON, JP ;
WILLIAMS, AJ ;
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :946-951
[10]   ADDITIONAL X-RAY AND ELECTRON-DIFFRACTION PEAKS OF POLYCRYSTALLINE SILICON FILMS [J].
HENDRIKS, M ;
RADELAAR, S ;
BEERS, AM ;
BLOEM, J .
THIN SOLID FILMS, 1984, 113 (01) :59-72