MOLECULAR-BEAM EPITAXY IN SPACE

被引:1
作者
ARTHUR, JR
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 06期
关键词
D O I
10.1116/1.569368
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1283 / 1284
页数:2
相关论文
共 14 条
[1]   ADSORPTION OF ZN ON GAAS [J].
ARTHUR, JR .
SURFACE SCIENCE, 1973, 38 (02) :394-412
[2]   INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].
ARTHUR, JR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&
[3]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[4]   FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].
CHO, AY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :S31-&
[5]   P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J].
CHO, AY ;
HAYASHI, I .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4422-&
[6]  
CHO AY, 1972, J APPL PHYS, V43, P5228
[7]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[8]   SOLAR POWER FROM SATELLITES [J].
GLASER, PE .
PHYSICS TODAY, 1977, 30 (02) :30-&
[9]   EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J].
GOSSARD, AC ;
PETROFF, PM ;
WEIGMANN, W ;
DINGLE, R ;
SAVAGE, A .
APPLIED PHYSICS LETTERS, 1976, 29 (06) :323-325
[10]  
HEUSER JE, 1976, J VAC SCI TECHNOL, V13, P702