ON THE CROSS-SLIP OF ISOLATED DISLOCATIONS AT THE SURFACE OF SILICON-CRYSTALS

被引：10

作者：

GEORGE, A

CHAMPIER, G

机构：

来源：

SCRIPTA METALLURGICA | 1980年 / 14卷 / 04期

关键词：

D O I：

10.1016/0036-9748(80)90334-8

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：399 / 403

页数：5

共 18 条

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[3]

George A., 1973, Crystal Lattice Defects, V4, P29

[4] DOUBLE CROSS-SLIP IN SILICON [J].

GEORGE, A ;

CHAMPIER, G .

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[5]

GEORGE A, 1977, THESIS I NATIONAL PO

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GOMEZ, A ;

COCKAYNE, DJ ;

HIRSCH, PB ;

VITEK, V .

PHILOSOPHICAL MAGAZINE, 1975, 31 (01) :105-113

[7] MOBILITY OF DISLOCATIONS IN GERMANIUM AND SILICON [J].

GOMEZ, AM ;

HIRSCH, PB .

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[8]

HAUSSERMANN F, 1973, PHILOS MAG, V27, P749

[9] NON-PARALLEL DISSOCIATION OF DISLOCATIONS IN THIN FOILS [J].

HAZZLEDINE, PM ;

KARNTHALER, HP ;

WINTNER, E .

PHILOSOPHICAL MAGAZINE, 1975, 32 (01) :81-97

[10]

LONGO, 1972, THESIS U PARIS 6

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