A TEM INVESTIGATION OF THE DISLOCATION ROSETTES AROUND VICKERS INDENTATIONS IN GAAS

被引：59

作者：

LEFEBVRE, A

ANDROUSSI, Y

VANDERSCHAEVE, G

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 99卷 / 02期

关键词：

D O I：

10.1002/pssa.2210990210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：405 / 412

页数：8

共 14 条

[1]

ALEXANDER H, 1979, J PHYS C, V6

[2]

Androussi Y., 1986, Materials Science Forum, V10-12, P821, DOI 10.4028/www.scientific.net/MSF.10-12.821

[3] DIFFRACTION FROM SINGLE AND OVERLAPPING STACKING-FAULTS IN FCC CRYSTALS [J].

CLAREBROUGH, LM ;

FORWOOD, CT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (01) :355-366

[4] ELECTRON-MICROSCOPE INVESTIGATION OF MICROPLASTIC DEFORMATION MECHANISMS OF SILICON BY INDENTATION [J].

EREMENKO, VG ;

NIKITENK.VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01) :317-330

[5] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS [J].

GEVERS, R ;

ART, A ;

AMELINCKX, S .

PHYSICA STATUS SOLIDI, 1963, 3 (09) :1563-1593

[6] INDENTATION PLASTICITY AND POLARITY OF HARDNESS ON (111) FACES OF GAAS [J].

HIRSCH, PB ;

PIROUZ, P ;

ROBERTS, SG ;

WARREN, PD .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03) :759-784

[7] ANISOTROPIC DEFORMATION-BEHAVIOR OF GAAS [J].

HOCHE, HR ;

SCHREIBER, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01) :229-236

[8] INDENTATION DISLOCATION ROSETTES IN SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1470-1472

[9] TRANSMISSION ELECTRON-MICROSCOPY OF SEMI-INSULATING GA AS DEFORMED AT ROOM-TEMPERATURE AND UNDER CONFINING PRESSURE [J].

LEFEBVRE, A ;

FRANCOIS, P ;

DIPERSIO, J .

JOURNAL DE PHYSIQUE LETTRES, 1985, 46 (21) :1023-1030

[10] VELOCITIES AND INTERNAL-FRICTION OF DISLOCATIONS IN III-V COMPOUNDS [J].

NINOMIYA, T .

JOURNAL DE PHYSIQUE, 1979, 40 :143-145

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