RECOVERY-TIME FOR A SILICON WAVE-GUIDE ALL-OPTICAL SWITCH

被引：4

作者：

COLBOURNE, PD

JESSOP, PE

机构：

[1] McMaster Univ, Hamilton, Ont, Can, McMaster Univ, Hamilton, Ont, Can

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 06期

关键词：

LASERS; DYE - OPTICAL DEVICES - Switching - SEMICONDUCTING SILICON;

D O I：

10.1049/el:19880204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dye laser pulses were used to switch the propagation path of an infrared ( lambda equals 1. 3 mu m) beam propagating in a planar silicon waveguide. Recovery times ranged from 1. 2 to 15 ns, depending on both the pulsed laser wavelength and the illumination geometry.

引用

页码：303 / 305

页数：3

共 5 条

[1] 1.3 MU-M ELECTROOPTIC SILICON SWITCH
LORENZO, JP
SOREF, RA
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 6 - 8
[2] ALL-OPTICAL, FIBEROPTIC MODULATOR AND LOGIC GATE USING NONLINEAR REFRACTION AND ABSORPTION
NORMANDIN, R
[J]. OPTICS LETTERS, 1986, 11 (11) : 751 - 753
[3] ALL-SILICON ACTIVE AND PASSIVE GUIDED-WAVE COMPONENTS FOR lambda equals 1. 3 AND 1. 6 mu M.
Soref, Richard A.
Lorenzo, Joseph P.
[J]. IEEE Journal of Quantum Electronics, 1986, QE-22 (06) : 873 - 879
[4] SZE SM, 1981, PHYSICS SEMICONDUCTO
[5] AMBIPOLAR DIFFUSION OF HIGH-DENSITY ELECTRONS AND HOLES IN GE, SI, AND GAAS - MANY-BODY EFFECTS
YOUNG, JF
VANDRIEL, HM
[J]. PHYSICAL REVIEW B, 1982, 26 (04) : 2145 - 2158

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