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AMBIPOLAR DIFFUSION OF HIGH-DENSITY ELECTRONS AND HOLES IN GE, SI, AND GAAS - MANY-BODY EFFECTS

被引：149
作者：
YOUNG, JF [1 ]
VANDRIEL, HM [1 ]
机构：
[1] UNIV TORONTO, ERINDALE COLL, MISSISSAUGA L5L 1C6, ONTARIO, CANADA
来源：
PHYSICAL REVIEW B | 1982年 / 26卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.26.2147
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2145 / 2158
页数：14
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