AMBIPOLAR DIFFUSION OF HIGH-DENSITY ELECTRONS AND HOLES IN GE, SI, AND GAAS - MANY-BODY EFFECTS

被引：149

作者：

YOUNG, JF ^{[1
]}

VANDRIEL, HM ^{[1
]}

机构：

[1] UNIV TORONTO, ERINDALE COLL, MISSISSAUGA L5L 1C6, ONTARIO, CANADA

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.26.2147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：2145 / 2158

页数：14

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