OPTIMAL-GROWTH CONDITIONS OF ALGAAS/GAAS QUANTUM WELLS BY FLOW-RATE MODULATION EPITAXY

被引：11

作者：

YAMAUCHI, Y

MAKIMOTO, T

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 02期

关键词：

D O I：

10.1143/JJAP.28.L155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L155 / L158

页数：4

共 16 条

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[5] INTERFACE DISORDER IN GAAS/ALGAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE-TEMPERATURE [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (09) :952-954

[6] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870

[7] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02) :169-179

[8] PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[9] FLOW-RATE MODULATION EPITAXY OF GAAS [J].

KOBAYASHI, N ;

MAKIMOTO, T ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (12) :L962-L964

[10] IMPROVED FLATNESS IN GAAS/ALGAAS HETEROINTERFACES GROWN BY FLOW-RATE MODULATION EPITAXY [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

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