USE OF CF3BR/AR DISCHARGES FOR REACTIVE ION ETCHING OF III-V SEMICONDUCTORS

被引:8
作者
PEARTON, SJ [1 ]
HOBSON, WS [1 ]
GEVA, M [1 ]
CHARKRABARTI, UK [1 ]
LANE, E [1 ]
PERLEY, AP [1 ]
机构
[1] AT&T BELL LABS,CTR SOLID STATE TECHNOL,BREINIGSVILLE,PA 18031
关键词
PLASMA ETCHING; SEMICONDUCTORS; EXPERIMENTAL;
D O I
10.1007/BF01447248
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
The reactive ion etching of GaAs, InP, InGaAs, and InAlAs in CF3Br/Ar discharges was investigated as a function of both plasma power density (0.56-1.3 W.cm-2) and total pressure (10-40 m Torr) The etch rate of GaAs in 19CF3Br:1Ar discharges at 10 m Torr increases linearly with power density, from 600 angstrom.min-1 at 0.56 W.cm-2, to 1550 angstrom.min-1 at 1.3 W.cm-2. The In-based materials show linear increases in etch rates only for power densities above approximately 1.0 W.cm-2. These etch rates are comparable to those obtained with CCl2F2:O2 mixtures under the same conditions. Smooth surface morphologies and vertical sidewalls are obtained over a wide range of plasma parameters. Reductions in the near-surface carrier concentration in n-type GaAs are evident for etching with power densities of > 0.8 W.cm-2, due to the introduction of deep level trapping centers. At 1.3 W.cm-2, the Schottky barrier height of TiPtAu contacts on GaAs is reduced from 0.74 to 0.53 eV as a result of this damage, and the photoluminescent intensity from the material is degraded. After RIE, we detect the presence of both F and Br on the surface of all of the semiconductors. This contamination is worse than with CCl2F2-based mixtures. High-power etching with CF3Br/Ar together with Al-containing electrodes can lead to the presence of a substantial layer of aluminum oxide on the samples if the moisture content in the reactor is appreciable.
引用
收藏
页码:295 / 310
页数:16
相关论文
共 29 条
[1]  
BELL HB, 1988, J ELECTROCHEM SOC, V135, P114
[2]  
BURTON RH, 1984, DRY ETCHING MICROELE
[3]   USE OF THIN ALGAAS AND INGAAS STOP-ETCH LAYERS FOR REACTIVE ION ETCH PROCESSING OF III-V-COMPOUND SEMICONDUCTOR-DEVICES [J].
COOPER, CB ;
SALIMIAN, S ;
MACMILLAN, HF .
APPLIED PHYSICS LETTERS, 1987, 51 (26) :2225-2226
[4]  
DASARO LA, 1981, AM I PHYSICS C SERIE, V56, P267
[5]   TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J].
DONNELLY, VM ;
FLAMM, DL ;
TU, CW ;
IBBOTSON, DE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2533-2537
[6]   MAGNETICALLY ENHANCED REACTIVE ION ETCHING OF SILICON IN BROMINE PLASMAS [J].
ELMASRY, AM ;
FONG, FO ;
WOLFE, JC ;
RANDALL, JN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :257-262
[7]   BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J].
FLAMM, DL ;
DONNELLY, VM ;
IBBOTSON, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :23-30
[8]   ETCHING AND FILM FORMATION IN CF3BR PLASMAS - SOME QUALITATIVE OBSERVATIONS AND THEIR GENERAL IMPLICATIONS [J].
FLAMM, DL ;
COWAN, PL ;
GOLOVCHENKO, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06) :1341-1347
[9]  
FLAMM DL, 1989, PLASMA ETCHING INTRO, pCH2
[10]  
HESS DW, 1987, 13TH P ANN PLASM SEM