FLUX FLOW MICROELECTRONICS

被引：36

作者：

Martens, J. S. ^{[1
]}

Hietala, V. M. ^{[1
]}

Plut, T. A. ^{[1
]}

Ginley, D. S. ^{[1
]}

Vawter, G. A. ^{[1
]}

Tigges, C. P. ^{[1
]}

Siegal, M. P. ^{[1
]}

Phillips, Julia M. ^{[2
]}

Hou, S. Y. ^{[2
]}

机构：

[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

[2] AT&T Bell Labs, Murray Hill, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

Microelectronics;

D O I：

10.1109/77.233545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flux-flow based devices such as the superconducting flux flow transistor and magnetically controlled long junctions have been made from thin films of TlCaBaCuO and YBaCuO. The devices are based on the magnetic control of flux flow in their respective structures: a long junction or an array of weak links. The equivalent circuits of the two devices are similar: a low impedance input control line, an output impedance of 3-20 Omega and an active current-controlled element. The long junctions have tended to be slower, have lower gain and be somewhat less noisy than their counterparts. The performance of circuits such as narrowband and distributed amplifiers (50 GHz bandwidths, noise figures < 3 dB), phase shifters (continuous with < 2 dB loss 4-40 GHz), logic gates (2-3 ps gate delays) and memories made using these devices will be compared and analyzed.

引用

页码：2295 / 2302

页数：8

共 18 条

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