VISIBLE PHOTOLUMINESCENCE FROM SIOX FILMS GROWN BY LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：19

作者：

TIMOFEEV, FN ^{[1
]}

AYDINLI, A ^{[1
]}

ELLIALTIOGLU, R ^{[1
]}

TURKOGLU, K ^{[1
]}

GURE, M ^{[1
]}

MIKHAILOV, VN ^{[1
]}

LAVROVA, OA ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 95卷 / 07期

关键词：

THIN FILMS; OPTICAL PROPERTIES; LUMINESCENCE;

D O I：

10.1016/0038-1098(95)00299-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

a-SiOx films of varying stoichiometry have been prepared by low temperature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energies ranging from the ultraviolet to the near infrared have been observed. PL,infrared and X-ray diffraction on selected samples indicate formation of Si clusters in the films. The effects of annealing on the PL properties of the films have been found to depend on initial stoichiometry of the films.

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页码：443 / 447

页数：5

相关论文

共 15 条

[1] PHYSICAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON .1. STRUCTURE, ELECTRONIC-PROPERTIES, AND ELECTRICAL-CONDUCTIVITY [J].

BRUESCH, P ;

STOCKMEIER, T ;

STUCKI, F ;

BUFFAT, PA .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7677-7689

[2] THEORY OF AMORPHOUS SIO2 AND SIOX .1. ATOMIC STRUCTURAL MODELS [J].

CHING, WY .

PHYSICAL REVIEW B, 1982, 26 (12) :6610-6621

[3] ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J].

DIMARIA, DJ ;

KIRTLEY, JR ;

PAKULIS, EJ ;

DONG, DW ;

KUAN, TS ;

PESAVENTO, FL ;

THEIS, TN ;

CUTRO, JA ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :401-416

[4] MICROSTRUCTURE AND OPTICAL-PROPERTIES OF FREESTANDING POROUS SILICON FILMS - SIZE DEPENDENCE OF ABSORPTION-SPECTRA IN SI NANOMETER-SIZED CRYSTALLITES [J].

KANEMITSU, Y ;

UTO, H ;

MASUMOTO, Y ;

MATSUMOTO, T ;

FUTAGI, T ;

MIMURA, H .

PHYSICAL REVIEW B, 1993, 48 (04) :2827-2830

[5] STRONG ROOM-TEMPERATURE PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS-SILICON OXIDE AND ITS CORRELATION TO POROUS SILICON [J].

LIN, CH ;

LEE, SC ;

CHEN, YF .

APPLIED PHYSICS LETTERS, 1993, 63 (07) :902-904

[6] PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION - DIFFERENCES BETWEEN DIRECT AND REMOTE PLASMA EXCITATION [J].

LUCOVSKY, G ;

TSU, DV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2231-2238

[7] LIGHT-EMISSION FROM CRYSTALLINE SILICON AND AMORPHOUS-SILICON OXIDE (SIOX) NANOPARTICLES [J].

MILEWSKI, PD ;

LICHTENWALNER, DJ ;

MEHTA, P ;

KINGON, AI ;

ZHANG, D ;

KOLBAS, RM .

JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (01) :57-62

[8] ELECTRICAL-CONDUCTIVITY OF SEMI-INSULATING POLYCRYSTALLINE SILICON AND ITS DEPENDENCE UPON OXYGEN-CONTENT [J].

NI, J ;

ARNOLD, E .

APPLIED PHYSICS LETTERS, 1981, 39 (07) :554-556

[9] VISIBLE PHOTOLUMINESCENCE FROM SI MICROCRYSTALS EMBEDDED IN SIO2 GLASS-FILMS [J].

OSAKA, Y ;

TSUNETOMO, K ;

TOYOMURA, F ;

MYOREN, H ;

KOHNO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (3B) :L365-L366

[10] INFRARED SPECTROSCOPIC STUDY OF SIOX FILMS PRODUCED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

PAI, PG ;

CHAO, SS ;

TAKAGI, Y ;

LUCOVSKY, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :689-694