PARAMETER DEPENDENCE OF STABLE STATE OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE

被引:7
作者
FUKANO, Y [1 ]
UCHIHASHI, T [1 ]
OKUSAKO, T [1 ]
CHAYAHARA, A [1 ]
SUGAWARA, Y [1 ]
YAMANISHI, Y [1 ]
OASA, T [1 ]
MORITA, S [1 ]
机构
[1] SUMITOMO MET IND LTD, ADV TECHNOL RES LABS, AMAGASAKI, HYOGO 660, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 12A期
关键词
CONTACT ELECTRIFICATION; CHARGE DISSIPATION; STABLE STATE; UNSTABLE STATE; PHASE TRANSITION; SILICON OXIDE; AFM/STM;
D O I
10.1143/JJAP.33.6739
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the time evolution of a stable state which appeared in the dissipation of contact-electrified electrons. Here, four analytical quantities in the stable state, i.e., initial (electrostatic) force F-o, critical force F-c, critical time t(c) at stable-unstable phase transition and time constant tau(1) of the stable state, were investigated with respect to parameters of measurement (measurement voltage V-s and tip-sample distance Z) and contact elec trification (contact voltage V-c and contact time t(o)). As a result, we found that measurement parameters do not affect time evolution of the stable state, whereas contact electrification parameters strongly affect it. Furthermore, we obtained the approximated expression of the electrostatic force as a function of parameters on measurement and contact electrification, and time after contact electrification.
引用
收藏
页码:6739 / 6745
页数:7
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