ELIMINATION OF PAIR DEFECTS FROM GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：24

作者：

CHAI, YG ^{[1
]}

PAO, YC ^{[1
]}

HIERL, T ^{[1
]}

机构：

[1] VARIAN ASSOCIATES,DIV SOLID STATE MICROWAVE,SANTA CLARA,CA 95050

来源：

关键词：

D O I：

10.1063/1.96269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1327 / 1329

页数：3

共 8 条

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CHAI, YG
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798
[3] HAINES HW, 1964, INT ENG CHEM, V55, P44
[4] KABIBAYASHI H, 1984, JPN J APPL PHYS PT 2, V23, pL846
[5] MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P579
[6] SURFACE-DEFECTS ON MBE-GROWN GAAS
SUZUKI, Y
SEKI, M
HORIKOSHI, Y
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 164 - 167
[7] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS
WOOD, CEC
RATHBUN, L
OHNO, H
DESIMONE, D
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 299 - 303
[8] AUGER-ELECTRON SPECTROSCOPY STUDY OF GAAS SUBSTRATE CLEANING PROCEDURES
ZILKO, JL
WILLIAMS, RS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 406 - 408