GE SEGREGATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI1-XGEX/SI LAYERS

[1] ALLEN F, 1988, SILICON MOL BEAM EPI, V1, P65

[2] BEAN JC, 1985, 1ST P INT S SI MBE, V85, P376

[3] BEAN JC, 1984, J VAC SCI TECHNOL A, V2, P4

[4] EBERL K, 1987, J PHYS C SOLID STATE, V5, P329

[5] GROWTH TEMPERATURE-DEPENDENCE OF INTERFACIAL ABRUPTNESS IN SI/GE HETEROEPITAXY STUDIED BY RAMAN-SPECTROSCOPY AND MEDIUM ENERGY ION-SCATTERING [J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 219 - 221

[6] DIFFUSION OF GERMANIUM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1409 - 1410

[7] OLSON GL, 1988, MAT SCI REPORTS, V3, P1078

[8] ROSENCHER E, 1988, SILICON MOL BEAM EPI, V1, P161

[9] VANDEWALLE GFA, 1989, IN PRESS PHILIPS J R, V44

[10] ZALM PC, UNPUB APPL PHYS LETT

[1] ALLEN F, 1988, SILICON MOL BEAM EPI, V1, P65

[2] BEAN JC, 1985, 1ST P INT S SI MBE, V85, P376

[3] BEAN JC, 1984, J VAC SCI TECHNOL A, V2, P4

[4] EBERL K, 1987, J PHYS C SOLID STATE, V5, P329

[5] GROWTH TEMPERATURE-DEPENDENCE OF INTERFACIAL ABRUPTNESS IN SI/GE HETEROEPITAXY STUDIED BY RAMAN-SPECTROSCOPY AND MEDIUM ENERGY ION-SCATTERING [J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 219 - 221

[6] DIFFUSION OF GERMANIUM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1409 - 1410

[7] OLSON GL, 1988, MAT SCI REPORTS, V3, P1078

[8] ROSENCHER E, 1988, SILICON MOL BEAM EPI, V1, P161

[9] VANDEWALLE GFA, 1989, IN PRESS PHILIPS J R, V44

[10] ZALM PC, UNPUB APPL PHYS LETT